Published October 1, 2017 | Version v1
Journal article

One-dimensional ZnO nanostructure-based optoelectronics

  • 1. State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)
  • 2. Department of Mechanical Engineering, School of Engineering, Tokyo Institute of Technology NE-3, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan)

Description

Semiconductor nanowires, with their unique capability to bridge the nanoscopic and macroscopic worlds, have been demonstrated to have potential applications in energy conversion, electronics, optoelectronics, and biosensing devices. One-dimensional (1D) ZnO nanostructures, with coupled semiconducting and piezoelectric properties, have been extensively investigated and widely used to fabricate nanoscale optoelectronic devices. In this article, we review recent developments in 1D ZnO nanostructure based photodetectors and device performance enhancement by strain engineering piezoelectric polarization and interface modulation. The emphasis is on a fundamental understanding of electrical and optical phenomena, interfacial and contact behaviors, and device characteristics. Finally, the prospects of 1D ZnO nanostructure devices and new challenges are proposed. (topical review — zno-related materials and devices)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/26/11/118102

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
26
Journal Issue
11
Journal Page Range
[11 p.]
ISSN
1674-1056