Formation of metal nanoparticles by short-distance sputter deposition in a reactive ion etching chamber
Creators
- 1. Department of Mechanical Engineering and Engineering Mechanics, Michigan Technological University, Houghton, Michigan 49931 (United States)
- 2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)
Description
A new method is reported to form metal nanoparticles by sputter deposition inside a reactive ion etching chamber with a very short target-substrate distance. The distribution and morphology of nanoparticles are found to be affected by the distance, the ion concentration, and the sputtering time. Densely distributed nanoparticles of various compositions were fabricated on the substrates that were kept at a distance of 130 μm or smaller from the target. When the distance was increased to 510 μm, island structures were formed, indicating the tendency to form continuous thin film with longer distance. The observed trend for nanoparticle formation is opposite to the previously reported mechanism for the formation of nanoparticles by sputtering. A new mechanism based on the seeding effect of the substrate is proposed to interpret the experimental results.
Additional details
Identifiers
- DOI
- 10.1063/1.3211326;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 106
- Journal Issue
- 5
- Journal Page Range
- p. 054314-054314.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41096364
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ALUMINIUM; BRASS; CHROMIUM; COPPER; DEPOSITION; ETCHING; MORPHOLOGY; NANOSTRUCTURES; PARTICLES; SPUTTERING; SUBSTRATES; THIN FILMS
- Descriptors DEC
- ALLOYS; COPPER ALLOYS; COPPER BASE ALLOYS; ELEMENTS; FILMS; METALS; SURFACE FINISHING; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENTS; ZINC ALLOYS
Optional Information
- Notes
- (c) 2009 American Institute of Physics