<110> channeled depth distributions and values of electronic stopping for the fourth-row transition elements (Z = 19 -- 28) in the silicon crystal

We report experimentally measured depth distributions of the transitions elements of the fourth row of the periodic table channeled in the <110> direction of the Si crystal and calculate the corresponding values of electronic stopping S/sub e/. These values show the Z1-dependent nature of electronic stopping in this region of atomic number. The <110> channeled depth distributions of these transition (d shell) elements exhibit three peaks; the possible origin of the middle peak, which is not observed for the nontransition elements, is discussed