Published July 2011
| Version v1
Journal article
80-GHz AlGaInAs/InP 1.55 μm colliding-pulse mode-locked laser with low divergence angle and timing jitter
Creators
- 1. School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)
- 2. Intense Ltd., Glasgow G72 0BN (United Kingdom)
Description
We present an 80-GHz λ ∼ 1.55 μm passively colliding-pulse mode-locked laser based on a novel AlGaInAs/InP epitaxial structure, which consists of a strained 3-quantum-well active layer incorporated with a passive far-field reduction layer. The device generated 910 fs pulses with a state-of-art timing jitter value of 190 fs (4 – 80 MHz), while demonstrating a low divergence angle (12.7°×26.3°) with two fold butt coupling efficiency to a flat cleaved single mode fiber when compared with the conventional mode-locked laser
Availability note (English)
Available from http://dx.doi.org/10.1002/lapl.201110029Additional details
Identifiers
Publishing Information
- Journal Title
- Laser physics letters (Internet)
- Journal Volume
- 8
- Journal Issue
- 7
- Journal Page Range
- p. 535-540
- ISSN
- 1612-202X
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46020131
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; COMPARATIVE EVALUATIONS; ELECTROMAGNETIC PULSES; ENERGY EFFICIENCY; EPITAXY; GALLIUM ARSENIDES; GHZ RANGE; INDIUM PHOSPHIDES; LAYERS; MHZ RANGE; OPTICAL FIBERS; OPTICS; QUANTUM WELLS; SOLID STATE LASERS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EFFICIENCY; ELECTROMAGNETIC RADIATION; EVALUATION; FIBERS; FREQUENCY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; PULSES; RADIATIONS