Published September 11, 1999
| Version v1
Journal article
Analysis of trap spectra in LEC and epitaxial GaAs
Description
Different methods of trap parameter measurement are analysed. Transient photoconductivity and thermally stimulated effects were used to investigate the influence of traps in LEC SI-GaAs and high-resistivity epitaxial GaAs. The peculiarities of the TSC were analysed and shown to be related to the influence of crystal micro-inhomogeneities. (author)
Additional details
Identifiers
- PII
- S0168900299004337;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 434
- Journal Issue
- 1
- Journal Page Range
- p. 61-66
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- India
- INIS RN
- 34042907
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DIFFRACTION GRATINGS; ELECTRIC POTENTIAL; EXCITATION; GALLIUM ARSENIDES; PHOTOCONDUCTIVE CELLS; PHOTOCONDUCTIVITY; PULSES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; DIRECT ENERGY CONVERTERS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; PHOTOELECTRIC CELLS; PHYSICAL PROPERTIES; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 1999 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.