Thermally stimulated luminescence of undoped and Ce³⁺-doped Gd₂SiO₅ and (Lu,Gd)₂SiO₅ single crystals

Thermally stimulated luminescence (TSL) characteristics (TSL glow curves and TSL spectra) are investigated in the 4–520 K temperature range for the single crystals of gadolinium and lutetium–gadolinium oxyorthosilicates X-ray irradiated at 4 K, 8 K, or 80 K. The nominally undoped Gd₂SiO₅ and (Lu,Gd)₂SiO₅ crystals, containing traces of Ce³⁺, Tb³⁺, and Eu³⁺ ions, and Ce³⁺-doped Gd₂SiO₅ and (Lu,Gd)₂SiO₅ crystals are studied. For the first time, the TSL glow curves of these materials are measured separately for the electron (intrinsic, Ce³⁺- or Tb³⁺-related) and hole (Eu³⁺-related) recombination luminescence, and the TSL glow curve peaks, arising from thermal decay of various electron and hole centers, are identified. The origin of the traps related to the TSL peaks is discussed, and thermal stability parameters of the electron and hole traps are calculated. - Highlights: X-ray irradiated undoped and Ce³⁺-doped Gd₂SiO₅ and LuGdSiO₅ crystals are studied. • Thermally stimulated luminescence (TSL) characteristics are studied at 4–520 K. • TSL glow curves are measured for electron and hole recombination luminescence. • TSL glow curve peaks arising from various electron and hole centers are identified. • The origin and thermal stability parameters of electron and hole traps are defined