Synthesis of the iron disilicide layers for silicon optho-electronics with ion beams application

In this work a synthesis both uniform layers and β-FeSi2 fine-disperse films was carried out with application of Fe+ ions implantation into Si(100) with following pulse ion processing (PIP) of the implanted layers. The n-type Cz-Si monocrystalline plates with (100) orientation have been implanted by Fe+ ions at 300 K with energy 40 keV by dose up to 1.8·1017 cm-2 (ion flux density - 5 μA/cm2). After implantation the samples were exposed to PIP by strong nano-second ion beam (C+, E=300 keV, τ=50 ns, j∼100 A/cn2). Ion total dose introduced during PIP does not exceed 1·1014 cm-2. With use od X-ray diffraction it is shown, that PIP leads to generation of two-phase mixture: FeSi and β-FeSi2 with stressed crystal lattices. Following short-time annealing leads to complete transformation of FeSi phase into β-FeSi2 phase with formation of textured layer. Data of Raman scattering confirm the β-FeSi2phase generation with high silicon crystal rate