Design of BAs-AlN monolayered honeycomb heterojunction structures: A first-principles study

Graphical abstract: Single-layer honeycomb heterojunction structures based on alternated and coupled ribbons of BAs and AlN are investigated using first-principles density functional theory calculations. Optimized geometries, density of states, band-gaps, formation energies, and wave functions are studied for different ribbon widths joined along the zigzag and armchair edges. Optimized heterojunction geometries results revealed that BAs narrow ribbons exhibit a corrugation effect at the interface due to a lattice mismatch. From formation energy calculations, it was found that zigzag heterojunctions are more stable than the armchair heterojunctions. - Highlights: • We design new 2D-semiconductor heterojunction nanostructures. • Monolayers formed by alternated strips (heterojunctions) of aluminum-nitride and boron-arsenide, with graphene-like structure are explored by DFT method. • Due to the lattice mismatch, an effect of corrugation was observed in heterojunctions AlN and BAs. • Electronic band gaps are strongly dependent on width and chirality (zigzag or armchair) of the strips. • Formation energy calculations revealed that zigzag heterojunctions are more stable than the armchair heterojunctions. - Abstract: BAs and AlN are semiconductor materials with an indirect and direct gap respectively in the bulk phase. Recently, electronic calculations have demonstrated that a single-layer or few layers of BAs and AlN exhibit a graphite-like structure with interesting electronic properties. In this work, infinite sheets single-layer heterojunction structures based on alternated strips with honeycomb BAs and AlN layers are investigated using first-principles density functional theory calculations. Optimized geometries, density of states, band-gaps, formation energies, and wave functions are studied for different strip widths joined along zigzag and armchair edges. Results in optimized heterojunction geometries revealed that BAs narrow strips exhibit a corrugation effect due to a lattice mismatch. It was found that zigzag heterojunctions are more energetically favored than armchair heterojunctions. Furthermore, the formation energy presents a maximum at the point where the heterojunction becomes a planar structure. Electronic charge density results yielded a more ionic behavior in Al−N bonds than the B−As bonds in accordance with monolayer results. It was observed that the conduction band minimum for both heterojunctions exhibit confined states located mainly at the entire AlN strips whereas the valence band maximum exhibits confined states located mainly at BAs strips. We expect that the present investigation will motivate more experimental and theoretical studies on new layered materials made of III–V semiconductors.