First principles study of O defects in CdSe
- 1. Thailand Center of Excellence in Physics (ThEP Center), Commission on Higher Education, Bangkok 10400 (Thailand)
- 2. Department of Physics, Kasetsart University, Bangkok 10900 (Thailand)
- 3. Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)
- 4. School of Physics, Suranaree University of Technology and Synchrotron Light Research Institute, Nakhon Ratchasima 30000 (Thailand)
Description
Recently, the vibrational signatures related to oxygen defects in oxygen-doped CdSe were measured using ultrahigh resolution Fourier transform infrared (FTIR) spectroscopy by Chen et al.(2008) . They observed two absorption bands centered at ∼1991.77 and 2001.3 cm-1, which they attributed to the LVMs of OCd, in the samples grown with the addition of CdO and excess Se. For the samples claimed to be grown with even more excess Se, three high-frequency modes (1094.11, 1107.45, and 1126.33) were observed and assigned to the LVMs of OSe-VCd complex. In this work, we explicitly calculated the vibrational signatures of OCd and OSe-VCd complex defects based on first principles approach. The calculated vibrational frequencies of OCd and OSe-VCd complex are inconsistent with the frequencies observed by Chen et al., indicating that their observed frequencies are from other defects. Potential defects that could explain the experimentally observed modes are suggested.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2011.08.042Additional details
Identifiers
- DOI
- 10.1016/j.physb.2011.08.042;
- PII
- S0921-4526(11)00795-2;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 407
- Journal Issue
- 15
- Journal Page Range
- p. 2841-2845
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 26. international conference on defects in semiconductors
- Dates
- 18-22 Jul 2011
- Place
- Nelson (New Zealand)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43089876
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; ABSORPTION SPECTROSCOPY; CADMIUM OXIDES; CADMIUM SELENIDES; CRYSTAL DEFECTS; DOPED MATERIALS; FOURIER TRANSFORM SPECTROMETERS; INFRARED SPECTRA; OSCILLATION MODES; OXYGEN ADDITIONS; RESOLUTION
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; MATERIALS; MEASURING INSTRUMENTS; OXIDES; OXYGEN COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; SORPTION; SPECTRA; SPECTROMETERS; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.