Published April 2, 1980
| Version v1
Patent
Open
Improvements in or relating to charge coupled devices
Creators
Description
This invention relates to charge coupled devices for converting an electromagnetic radiation pattern in a certain wavelength range, particularly but not exclusively an infrared radiation pattern, into electrical signals. A semiconductor layer within this device can be of n-type silicon with a deep level impurity concentration present as proton bombardment induced defects in the crystal lattice or as an ion implanted concentration. (UK)
Availability note (English)
MF available from INIS under the Report Number.Files
11553542.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 15 p.
- IPC:
- Int. Cl. H01l27/14; H01l29/78.
- IPC
- Int. Cl. H01l27/14; H01l29/78.
- Patent number
- GB patent document 1564107/A/
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 11553542
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTAL DOPING; IMAGE CONVERTERS; INFRARED RADIATION; ION IMPLANTATION; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SILICON; SPECIFICATIONS
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; IMAGE TUBES; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS