Published April 2, 1980 | Version v1
Patent Open

Improvements in or relating to charge coupled devices

Description

This invention relates to charge coupled devices for converting an electromagnetic radiation pattern in a certain wavelength range, particularly but not exclusively an infrared radiation pattern, into electrical signals. A semiconductor layer within this device can be of n-type silicon with a deep level impurity concentration present as proton bombardment induced defects in the crystal lattice or as an ion implanted concentration. (UK)

Availability note (English)

MF available from INIS under the Report Number.

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Additional details

Publishing Information

Imprint Pagination
15 p.
IPC:
Int. Cl. H01l27/14; H01l29/78.
IPC
Int. Cl. H01l27/14; H01l29/78.
Patent number
GB patent document 1564107/A/