Published December 8, 2004
| Version v1
Journal article
Optical studies on GaN-based spintronics materials
- 1. Department of Electronics and Information Science, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)
- 2. Department of Physics, Wakayama University, Wakayama 640-8510 (Japan)
- 3. Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047 (Japan)
Description
Structural properties of GaN layers doped with magnetic impurities (Mn, Cr) were investigated by Raman scattering. In the case of Mn-doping, an impurity mode was observed at around 585 cm-1 with concentrations of Mn up to 1-2%. This mode was assigned to a local vibrational mode of Mn substituting the Ga site, and interpreted as spectral evidence of a uniform solid solution in the samples. For Cr-doping, good crystalline quality was also confirmed up to [Cr] = 3-5%. Cr is more miscible in GaN than Mn. Resonance enhancement of LO phonon signal was observed in GaCrN layers when excited by a deep UV laser at 266 nm (4.7 eV). This indicates generation of photo-carriers
Availability note (English)
Available online at http://stacks.iop.org/0953-8984/16/S5811/cm4_48_054.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0953-8984/16/S5811/cm4_48_054.pdf; http://www.iop.org/;
- DOI
- 10.1088/0953-8984/16/48/054;
- PII
- S0953-8984(04)79480-1;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 16
- Journal Issue
- 48
- Journal Page Range
- p. S5811-S5814
- ISSN
- 0953-8984
- CODEN
- JCOMEL
Conference
- Title
- 1. international conference on nanospintronics design and realization
- Dates
- 24-28 May 2004
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36035710
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE CARRIERS; CHROMIUM ADDITIONS; CRYSTAL STRUCTURE; DOPED MATERIALS; EV RANGE; GALLIUM NITRIDES; LASER RADIATION; LAYERS; MANGANESE ADDITIONS; PHONONS; RAMAN EFFECT; RESONANCE; SOLID SOLUTIONS; VIBRATIONAL STATES
- Descriptors DEC
- ALLOYS; CHROMIUM ALLOYS; DISPERSIONS; ELECTROMAGNETIC RADIATION; ENERGY LEVELS; ENERGY RANGE; EXCITED STATES; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; MANGANESE ALLOYS; MATERIALS; MIXTURES; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; QUASI PARTICLES; RADIATIONS; SOLUTIONS; TRANSITION ELEMENT ALLOYS