Noise characterization of transistors in a 1.2 μm CMOS-SOI technology up to a total-dose of 12 Mrad (Si)

The analog performance of the Thomson HSOI3-HD technology has been measured up to a total dose of 12 Mrad(Si) of ionizing radiation (60Co). The threshold voltage shift is -170 mV for p-channel and -20 mV for n-channel transistor. Transconductance degradation is respectively 4% and 17%. Noise has been measured in the 500 Hz-25 MHz bandwidth. In addition to the 1/f and white noise, a generation-recombination contribution appears in the noise spectrum. This contribution is sensitive to the bias applied to the backgate and body electrodes. The white noise increase after irradiation is 16% for p-channel and 35% for n-channel transistors. P-channel transistors have very low 1/f noise and are less sensitive to irradiation effects