Design of ultralow power receiver front-ends for 2.4 GHz wireless sensor network applications
- 1. Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China)
Description
This paper presents the design of an ultralow power receiver front-end designed for a wireless sensor network (WSN) in a 0.18 μm CMOS process. The author designs two front-ends working in the saturation region and the subthreshold region respectively. The front-ends contain a two-stage cross-coupling cascaded common-gate (CG) LNA and a quadrature Gilbert IQ mixer. The measured conversion gain is variable with high gain at 24 dB and low gain at 7 dB for the saturation one, and high gain at 22 dB and low gain at 5 dB for the subthreshold one. The noise figure (NF) at high gain mode is 5.1 dB and 6.3 dB for each. The input 1 dB compression point (IP1dB) at low gain mode is about −6 dBm and −3 dBm for each. The front-ends consume about 2.1 mA current from 1.8 V power supply for the saturation one and 1.3 mA current for the subthreshold one. The measured results show that, comparing with the power consumption saving, it is worth making sacrifices on the performance for using the subthreshold technology. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/35/1/015005Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 35
- Journal Issue
- 1
- Journal Page Range
- [8 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47010198
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; COMPRESSION; DESIGN; GAIN; GHZ RANGE; INTEGRATED CIRCUITS; MIXERS; NOISE; QUADRATURES; SATURATION; SEMICONDUCTOR MATERIALS; SENSORS
- Descriptors DEC
- AMPLIFICATION; ELECTRONIC CIRCUITS; EQUIPMENT; EVALUATION; FREQUENCY RANGE; MATERIALS; MATERIALS HANDLING EQUIPMENT; MICROELECTRONIC CIRCUITS