Published May 30, 2009 | Version v1
Journal article Metadata-only

Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films

Creators

  • 1. Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A35, Beijing 100083 (China)

Description

Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into nonpolar a-plane (112-bar 0) p-type GaN films and a subsequent rapid thermal annealing process. The ferromagnetism properties of the films were studied by means of superconducting quantum interference device (SQUID). Clearly in-plane magnetic anisotropy characteristics of the sample at 10 K were revealed with the direction of the applied magnetic field rotating along the in-plane [0 0 0 1]-axis. Moreover, obvious ferromagnetic properties of the sample up to 350 K were detected by means of the temperature-dependent SQUID.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2009.04.018

Additional details

Identifiers

DOI
10.1016/j.apsusc.2009.04.018;
PII
S0169-4332(09)00392-4;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
255
Journal Issue
16
Journal Page Range
p. 7451-7454
ISSN
0169-4332
CODEN
ASUSEE

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44017585
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANISOTROPY; ANNEALING; FERROMAGNETISM; FILMS; GALLIUM NITRIDES; ION IMPLANTATION; MAGNETIC FIELDS; MAGNETIC SEMICONDUCTORS; MANGANESE ADDITIONS; SQUID DEVICES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
ALLOYS; ELECTRONIC EQUIPMENT; EQUIPMENT; FLUXMETERS; GALLIUM COMPOUNDS; HEAT TREATMENTS; MAGNETISM; MANGANESE ALLOYS; MATERIALS; MEASURING INSTRUMENTS; MICROWAVE EQUIPMENT; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR MATERIALS; SUPERCONDUCTING DEVICES; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.