Operation of Bidirectional Switches (DIAC) and Silicon Controlled Rectifiers (SCR) in Gamma-Radiation Environment

Gamma-irradiation effects on the electrical parameters of the Diode AC switch (DIAC; PHI37 500) and Silicon Controlled Rectifier (SCR; 2N4444) devices have been studied in detail, where gamma-dose up to 137 x 106 rad was found to cause a serious permanent damage on their electrical characteristics. A pronounced increase in the break-over voltage (from 31.5 to 35 V), holding-current (from 13 to 53 mA) and holding voltage (from 22 to 32 V) of the DIAC is noticed. Besides, a severe decrease in the dynamic break-over voltage range (from 10 to 2.5 V) and negative resistance (from -750 to -168 ohm) is also observed. Exposing the SCRs to gamma-radiation causes their turn-on voltage and forward voltage drop values to increase from 0.8 to 2.8 V and from 1.4 to 4.5 V, respectively. Additionally, the holding current increases to 18 mA although its initial value is 3.5 mA. For the two devices, the linear dependence and high sensitivity of their electrical parameters to gamma-dose suggest the application of such devices in the field of radiation dosimetry