Crystallization mechanism and secondary defects formation under nanosecond annealing of implanted silicon layers

New results on studying crystal-phase transformations at liquid-phase epitaxial crystallization under pulsed nanosecond annealing of implanted layers are presented. With their account and with due account of available literature data a new mechanism of liquid-phase epitaxial crystallization based on the supposition on existence of multiatomic nuclei near supercooled crystallization front and their attachment as an integral to the growing crystal is suggested. The mechanism takes into account orientation dependence of crystal growth and explains main regularities of defect formation under pulsed nanosecond annealing