Published July 2000
| Version v1
Journal article
The effect of isovalent impurity of germanium on piezoresistance of silicon
- 1. Luts'kij derzhavnij tekhnyichnij unyiversitet, Luts'k (Ukraine)
Description
The existence of internal stresses in crystals with isovalent impurity determines the actuality of researching their influence upon the kinetic effects, since the energy state of electrically passive region is changing in deformed crystal under the action of elastic strain field. The present paper is devoted to study the effect of the above mentioned fields of internal stress on piezo resistances of n-Si-crystals
Additional details
Additional titles
- Original title (Ukrainian)
- Vpliv yizovalentnoyi domyishki Ge na p'jezoopyir kremnyiyu
Publishing Information
- Journal Title
- Zhurnal Fyizichnikh Doslyidzhen'
- Journal Volume
- 4
- Journal Issue
- 3
- Journal Page Range
- p. 318-320
- ISSN
- 1027-4642
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 33026058
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL FIELD; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; GERMANIUM ADDITIONS; KINETICS; N-TYPE CONDUCTORS; OPTICAL PROPERTIES; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
- Descriptors DEC
- ALLOYS; ELECTRICAL PROPERTIES; ELEMENTS; GERMANIUM ALLOYS; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SEMIMETALS; TEMPERATURE RANGE