Published November 1999
| Version v1
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The peculiarities of recombination of charge carriers in silicon with impurity-defect complexes
- 1. AN RU, Inst. of Nuclear Physics, Tashkent(Uzbekistan)
Description
no abstract available
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31011602.pdf
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Additional details
Additional titles
- Original title (Russian)
- Особенности рекомбинации носителей заряда в кремнии, содержащем примесно-дефектные комплексы
Publishing Information
- Imprint Title
- Book of abstracts of the second Uzbekistan physical electronics conference
- Imprint Pagination
- 180 p.
- Journal Page Range
- p. 70
- Report number
- INIS-UZ--066
Conference
- Title
- 2. Uzbekistan physical electronics conference
- Dates
- 3-5 Nov 1999
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 31011602
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CARRIER LIFETIME; CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ENERGY LEVELS; PALLADIUM ADDITIONS; PHOTOCONDUCTIVITY; PLATINUM ADDITIONS; RECOMBINATION; SILICON
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; LIFETIME; PHYSICAL PROPERTIES; SEMIMETALS; SPECTROSCOPY