Published March 7, 2011 | Version v1
Journal article

Growth rate induced monoclinic to tetragonal phase transition in epitaxial BiFeO3 (001) thin films

  • 1. Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), Singapore 117602 (Singapore)
  • 2. Department of Materials Science and Engineering, National University of Singapore, Singapore 117574 (Singapore)
  • 3. Singapore Synchrotron Light Source (SSLS), National University of Singapore (NUS), 5 Research Link, Singapore 117603 (Singapore)

Description

Epitaxial BiFeO3 thin films were deposited on SrRuO3 buffered SrTiO3 (001) substrates at different growth rates by varying the radio frequency sputtering power. With increasing growth rate, the crystal structure of BiFeO3 films develops from monoclinic lattice to a mixture phase of tetragonal lattice T1 with c/a∼1.05 and giant tetragonal lattice T2 with c/a∼1.23, finally to a single tetragonal phase T2, as shown by high resolution synchrotron x-ray diffraction reciprocal space mappings. The observed phase transitions, induced by film growth rate, offer an alternative strategy to manipulate crystalline phases in epitaxial ferroelectric thin films.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
98
Journal Issue
10
Journal Page Range
p. 102902-102902.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2011 American Institute of Physics