Published 1990
| Version v1
Journal article
Formation of F2--centers in LiF crystals
- 1. Tomskij Inzhenerno-Stroitel'nyj Inst., Tomsk (USSR)
Description
We report time-resolved measurement of emission and absorption of F2- and F2-centers in the crystal of LiF following excitation by pulsed ionizing radiation at a temperature between 80 and 300 K. It is found that the formation of F2-centers increases as a function of temperature in the 80 to 200 K range and at temperature higher than 200 K it is practically constant up to 300 K. We conclude that the electron is captures by F2 in a triplet state to give an F2-center
Additional details
Additional titles
- Original title (Russian)
- Образование Ф
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk Latvijskoj SSR, Seriya Fizicheskikh i Tekhnicheskikh Nauk
- Journal Issue
- no.5
- Series
- Izv. Akad. Nauk Latv. SSR, Ser. Fiz. Tekh. Nauk.
- ISSN
- 0321-1673
- CODEN
- IALFA
INIS
- Country of Publication
- Latvia
- Country of Input or Organization
- USSR
- INIS RN
- 23006669
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTALS; F CENTERS; KINETICS; LITHIUM FLUORIDES; LOW TEMPERATURE; MEDIUM TEMPERATURE; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RADIOLUMINESCENCE; RELAXATION TIME; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALKALI METAL COMPOUNDS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; EMISSION; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; LITHIUM COMPOUNDS; LITHIUM HALIDES; LUMINESCENCE; PHOTON EMISSION; POINT DEFECTS; RADIATION EFFECTS; VACANCIES