H2 plasma development of X-ray imaged patterns on plasma-polymerized resists

An X-ray imaged pattern on a plasma-polymerized film was successfully developed by H2 plasma etching. Plasma-polymerized MMA and 6FBMA were formed by using an inductively coupled argon flow type reactor. An X-ray imaged pattern on the film was attained through a knife-cut window of a gold plate. The X-ray was generated from a Cu target at 20kV and main wavelength 1.54 A. The pattern development was performed using a tubular type reactor with parallel plate electrodes. The quality of plasma-polymerized resists in an X-ray lithography was evaluated by comparing it with the conventional polymer in the dry and wet process, and the minimum dose rate for a visible pattern fabrication was measured to be 4.1J/cm2 for both resists in H2 plasma etching development