Published February 2008
| Version v1
Journal article
Growth Model for Pulsed-Laser Deposited Perovskite Oxide Films
- 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
- 2. Department of Physics, University of California at Davis, Davis, California 95616 (United States)
Description
We present a multi-level growth model that yields some of the key features of perovskite oxide film growth as observed in the reflection high energy electron diffraction (RHEED) and ellipsometry studies. The model describes the effect of deposition, temperature, intra-layer transport, interlayer transport and Ostwald ripening on the morphology of a growth surface in terms of the distribution of terraces and step edges during and after deposition. The numerical results of the model coincide well with the experimental observation
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/25/2/084Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 25
- Journal Issue
- 2
- Journal Page Range
- p. 663-666
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44112624
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTAL GROWTH; DEPOSITION; ELECTRON DIFFRACTION; ELLIPSOMETRY; MORPHOLOGY; OXIDES; PEROVSKITE; TEMPERATURE DEPENDENCE; THIN FILMS
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; FILMS; MEASURING METHODS; MINERALS; OXIDE MINERALS; OXYGEN COMPOUNDS; PEROVSKITES; SCATTERING