Reliability of electronic devices at high temperature

The upper operating temperature for conventional electronic devices mainly composed of Si devices and organic materials is limited to 200degC. On the other hand, SiC devices and diamond devices have recently been developed to function at up to 500degC and are expected to be applied for high temperature. The problem to operate electronic circuits stably for long period at high temperatures is thermal degradation and interdiffusion between materials. In this paper, conductive, resistive and insulating materials which can be operated under 300degC are investigated. Also the experimental results of metal diffusion into SiC crystal is reported. (author)