DLTS method for spectroscopy of hydrogenized defects in irradiated n-Si

The emission and the electron capture by the radiation defects induced by fast electrons irradiation to the hydrogenized silicon of n-type thermal treated at 300 ... 400 degree C were investigated by the capacitance spectroscopy. The spectrum amplitude dependence on temperature was revealed by the standard DLTS method use. It is shown that spectrum pattern is defined by the hydrogenous defect amphoteric properties. The carrier emission and capture for such defects are realized through the neutral metastable state. The possibility of the standard procedure τ = f )Tm) use to the analysis of such spectra was examined. It is shown that to obtain the real information the complex investigation of emission and capture by capacitance methods is necessary. This investigation will be realized also on the base of experimental data, obtained by other methods (Hall effect, IK-spectroscopy)