Published May 26, 2003
| Version v1
Journal article
Tuning the structural and optical properties of 1.3-μm InAs/GaAs quantum dots by a combined InAlAs and GaAs strained buffer layer
Creators
- 1. EPSRC National Centre for III-V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)
Description
A combined InAlAs and GaAs strained buffer layer was presented to tailor the structural and optical properties of 1.3-μm InAs/GaAs quantum dots. This growth technique exhibits an increment of InAs quantum-dot density from 1.6x1010 to 2.8x1010 cm-2 and an improvement of energy separation between the quantum-dot ground and first-excited states from 84 to 93 meV upon adjusting the thickness of GaAs in InAlAs-GaAs buffer layer. We also investigate the effect of an InAlAs layer surrounding InAs quantum dots on photoluminescence intensity with increasing the thickness of InAlAs layer in a 6-nm InAlAs-InGaAs composite cap layer, and no negative effect has been observed
Additional details
Identifiers
- DOI
- 10.1063/1.1577827;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 21
- Journal Page Range
- p. 3644-3646
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35037711
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; EXCITED STATES; GALLIUM ARSENIDES; GROUND STATES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; REFLECTION; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EMISSION; ENERGY LEVELS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; SCATTERING
Optional Information
- Notes
- (c) 2003 American Institute of Physics.