Dose-dependent thermal oxidation of Ge+-implanted silicon

Thermal oxidation of Ge+-implanted silicon (1 0 0) has been investigated over a wide range of Ge-fluences and temperatures under both wet and dry oxidation conditions. Implanted samples were pre-oxidized and then etched to produce a common sample set with a thin Ge:Si layer at the surface to ensure a common sample morphology for various experimental conditions. Oxidation kinetics as a function of Ge-fluence and annealing temperature are reported and compared to results from virgin silicon (1 0 0). Random and ion-channeled Rutherford backscattering (RBS) characterization techniques, accompanied by computer simulations (SIMNRA), were used for oxide and Ge-segregated layer thickness and composition measurements. Ge-rich Ge xSi1-x segregated layer composition are presented as a function of implantation and oxidation conditions