Published October 1, 2017
| Version v1
Journal article
High power-efficient asynchronous SAR ADC for IoT devices
- 1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Description
This paper presents a power-efficient 100-MS/s, 10-bit asynchronous successive approximation register (SAR) ADC. It includes an on-chip reference buffer and the total power dissipation is 6.8 mW. To achieve high performance with high power-efficiency in the proposed ADC, bootstrapped switch, redundancy, set-and-down switching approach, dynamic comparator and dynamic logic techniques are employed. The prototype was fabricated using 65 nm standard CMOS technology. At a 1.2-V supply and 100 MS/s, the ADC achieves an SNDR of 56.2 dB and a SFDR of 65.1 dB. The ADC core consumes only 3.1 mW, resulting in a figure of merit (FOM) of 30.27 fJ/conversionstep and occupies an active area of only 0.009 mm2. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/38/10/105001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 38
- Journal Issue
- 10
- Journal Page Range
- [7 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51064524
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANALOG-TO-DIGITAL CONVERTERS; AVAILABILITY; BUFFERS; EFFICIENCY; PERFORMANCE; REDUNDANCY; SWITCHES
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELECTRONIC EQUIPMENT; EQUIPMENT