Published March 23, 2015 | Version v1
Journal article Metadata-only

InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer

Creators

  • 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

Description

This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers. This record long wavelength lasing is achieved by applying InP-based Sb-free structures with eight periods of strain-compensated InAs quantum wells grown on metamorphic In0.8Al0.2As template layers. The continuous-wave threshold current density is 797 A/cm2 and the idealized extrapolated threshold current density for infinite cavity length is as low as 58 A/cm2 per quantum well at 120 K. This scheme is a promising pathway for extending the wavelength range of type-I quantum well lasers on InP substrates

Additional details

Identifiers

DOI
10.1063/1.4916270;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
106
Journal Issue
12
Journal Page Range
p. 121102-121102.4
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46104451
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ALUMINIUM ARSENIDES; BUFFERS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LENGTH; QUANTUM WELLS; SOLID STATE LASERS; STRAINS; SUBSTRATES; THRESHOLD CURRENT; WAVELENGTHS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; DIMENSIONS; ELECTRIC CURRENTS; INDIUM COMPOUNDS; LASERS; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES

Optional Information

Notes
(c) 2015 AIP Publishing LLC