Published October 1986
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A localized orbital description of ideal vacancies in GaP and GaSb
- 1. Middle East Technical Univ., Ankara (Turkey)
Description
Gaussian orbitals of s and p symmetry and an empirical pseudopotential Hamiltonian is employed for the study of electronic structures of ideal vacancies in GaP and GaSb. A reasonably accurate description of band structures and densities of states are attained. (author)
Availability note (English)
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18058683.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 10 p.
- Report number
- IC--86/274
INIS
- Country of Publication
- International Atomic Energy Agency (IAEA)
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 18058683
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANTIMONY COMPOUNDS; BAND THEORY; ELECTRONIC STRUCTURE; GALLIUM COMPOUNDS; GALLIUM PHOSPHIDES; SEMICONDUCTOR MATERIALS; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; POINT DEFECTS
Optional Information
- Notes
- 13 refs, 4 figs, 3 tabs.