Published 1999
| Version v1
Book
Proton irradiation induced defects in 6H- and 4H-SiC
Creators
- 1. Technische Univ., Graz (Austria). Inst. fuer Technische Physik
- 2. Technische Hochschule, Darmstadt (Germany)
- 3. McMaster Univ., Hamilton, Ontario (Canada)
Description
Annealing of defects in proton irradiated bulk n-type 6H- and semi-insulating 4H-SiC has been investigated by positron lifetime spectroscopy and Doppler-broadening measurements. For the n-type sample radiation induced defects in dependence of the proton fluence were studied. Three or four annealing stages were found, during which the formation of larger defect complexes could be observed
Additional details
Publishing Information
- Publisher
- Materials Research Society
- Imprint Place
- Warrendale, PA (United States)
- ISBN
- 1-55899-446-7
- Imprint Title
- Microstructural processes in irradiated materials
- Imprint Pagination
- 754 p.
- Series
- Materials Research Society symposium proceedings, Volume 540
- Journal Page Range
- p. 177-182
- ISSN
- 0272-9172
Conference
- Title
- 1998 Fall Meeting of the Materials Research Society
- Dates
- 30 Nov - 4 Dec 1998
- Place
- Boston, MA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30052060
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; EXPERIMENTAL DATA; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTAL STRUCTURE; DATA; HEAT TREATMENTS; INFORMATION; MATERIALS; NUMERICAL DATA; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS
Optional Information
- Funding organization
- Natural Sciences and Engineering Research Council of Canada, Ottawa, ON (United States)
- Secondary number(s)
- CONF-981104--