Published June 16, 1984
| Version v1
Journal article
Anisotropy of electrical conductivity in Si2Te3
Creators
- 1. Karlsruhe Univ. (T.H.) (Germany, F.R.). Inst. fuer Angewandte Physik
Description
Results of electrical conductivity measurements of Si2Te3 crystals are presented. An ultrahigh vacuum experiment was used to avoid chemical surface reactions before and during measurements. To obtain clean sample surface the crystals were mechanically cleaved or sputtered with an argon ion beam and subsequently annealed in this equipment. The temperature dependence of the electrical conductivity perpendicular and parallel to the c-axis of samples is shown and discussed
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi A
- Journal Volume
- 83
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K183-K186
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 16009681
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ANISOTROPY; ANNEALING; CLEAVAGE; ELECTRIC CONDUCTIVITY; SILICON COMPOUNDS; SPUTTERING; SURFACES; TELLURIDES; TEMPERATURE DEPENDENCE; ULTRAHIGH VACUUM
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ENERGY; HEAT TREATMENTS; MICROSTRUCTURE; PHYSICAL PROPERTIES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- Short note.