One-step preparation of N-doped strontium titanate films by pulsed laser deposition

Perovskite-type oxynitrides exhibit promising electrical and optical properties and can possibly be used in the future as functional materials for electrical, photo-, and electrochemical applications. Continuous heterovalent substitution of oxygen ions by nitrogen ions allows tuning of the desired optical and/or electronic properties to the application specifications. In the present work deposition of SrTiO3:N films by pulsed reactive crossed beam laser ablation was studied in order to examine the influence of different deposition parameters on the film crystallinity and composition. The deposited films exhibit a perovskite-type crystal structure and reveals epitaxial growth on MgO(100) substrates. The unit cell parameters of the deposited SrTiO3:N films range within 3.911<a<3.919, which is slightly larger than for polycrystalline SrTiO3 (a=3.905). The studied films reveal an oxygen content in the range of (2.70-2.98)±0.15. The relative N content (vs. O) can be tuned within the range of 1.0-3.0% by adjusting the deposition parameters. The N:O concentration ratio increases with increasing laser fluence and target-to-substrate distances, while the substrate temperature has a more complex influence on the nitrogen concentration. In the range of 580-650 C the [N]/[O] ratio increases while further heating results in a gradual decrease of the N content. (orig.)