Published March 1, 1978
| Version v1
Journal article
Physical and electrical properties of laser-annealed ion-implanted silicon
- 1. Stanford Electronics Laboratories, Stanford, California 94305
Description
The use of a laser as a tool for annealing of ion-implantation damage is described. The principal results obtained are as follows: (1) electrical measurements show that activity comparable to that of a 1000 0C 30-min anneal can be obtained; (2) TEM measurements show that complete recrystallization of the damaged layer occurs during the laser anneal; (3) impurity profiles obtained from SIMS measurments show that the dopant atoms remain in the LSS profile during annealing. Simple diodes were fabricated to examine the feasibility of the method for device fabrication
Additional details
Identifiers
- DOI
- 10.1063/1.90046;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 32
- Journal Issue
- 5
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 276-278
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 9389035
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; ARSENIC IONS; DEPTH DOSE DISTRIBUTIONS; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPY; ION IMPLANTATION; JUNCTION DIODES; KEV RANGE 10-100; LASER RADIATION; MASS SPECTROSCOPY; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; RECRYSTALLIZATION; SILICON
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; MICROSCOPY; PHYSICAL PROPERTIES; RADIATION DOSE DISTRIBUTIONS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SPATIAL DOSE DISTRIBUTIONS; SPECTROSCOPY
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent