A study on the microstructure of Pt/TaN/Si films by high resolution TEM analysis
Creators
- 1. Hanyang Univ., Ansan (Korea, Republic of)
- 2. Samsung Electronics Inc., Yongin (Korea, Republic of)
Description
The microstructure change of Pt/amorphous TaN/Si films after various heat treatments has been investigated by high resolution transmission electron microscopy (HR-TEM) analysis. TaN thin films are deposited by remote plasma metalorganic chemical vapor deposition (RP-MOCVD) using pentakis-dimethyl-amino-tantalum (PDMATa) and radical sources, hydrogen and ammonia plasma. Deposited TaN thin film shows excellent barrier properties such as good resistance against oxidation after post-heat treatment at high temperature. In the case of hydrogen plasma, however, diffusion of Pt into TaN layer was observed, which was caused by the out-diffusion of carbon through the grain boundaries of Pt. In the case of ammonia plasma, the formation of thin oxide layer at the Pt/TaN interface was observed
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 33
- Journal Issue
- Suppl
- Series
- 5 refs, 5 figs, 1 tab
- Journal Page Range
- p. S159-S161
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 34074552
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; FILMS; MICROSTRUCTURE; PLASMA; PLATINUM; SILICON; TANTALUM NITRIDES; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- CHEMICAL COATING; DEPOSITION; ELECTRON MICROSCOPY; ELEMENTS; METALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PLATINUM METALS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SEMIMETALS; SURFACE COATING; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS