Published September 1, 2009 | Version v1
Journal article Metadata-only

The effects of hydrogen dilution on structure of Si:H thin films deposited by PECVD

Creators

  • 1. University of Natural Science HCM, 227 Nguyen Van Cu Str., 5 Distr., Ho Chi Minh City (Viet Nam)
  • 2. Institute of Physics, Na Slovance 2 CZ-182 21 Prague Praha (Czech Republic)
  • 3. College of Technology, VNU, 144 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)

Description

Si:H thin films were deposited using PECVD method at substrate temperature of 250 deg. C with different hydrogen dilution. Structure investigations and hydrogen concentration estimation were performed using FTIR, Raman and UV-VIS spectroscopy. The IR and Raman spectra show various peak shifting when H dilution is changed. Band gaps of films were evaluated from the strong absorption regions in UV-VIS transmission spectra. The results demonstrate a transition from amorphous to nc/μc structure when hydrogen dilution increased.

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/187/1/012035

Additional details

Identifiers

DOI
10.1088/1742-6596/187/1/012035;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
187
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
1742-6596

Conference

Title
APCTP-ASEAN workshop on advanced materials science and nanotechnology
Acronym
AMSN08
Dates
15-21 Sep 2008
Place
Nha Trang City (Viet Nam)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41062417
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHEMICAL VAPOR DEPOSITION; DILUTION; HYDROGEN; INFRARED SPECTRA; NANOSTRUCTURES; RAMAN SPECTRA; TEMPERATURE RANGE 0400-1000 K; THIN FILMS
Descriptors DEC
CHEMICAL COATING; DEPOSITION; ELEMENTS; FILMS; NONMETALS; SPECTRA; SURFACE COATING; TEMPERATURE RANGE