Published April 1, 1993 | Version v1
Journal article

Excess voltage and resistance in superconductor-semiconductor junctions

  • 1. IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)
  • 2. AT ampersand T Bell Laboratories, Holmdel, New Jersey 07733 (United States)

Description

We report the observation of excess voltage in Nb-InxGa1-xAs superconductor-semiconductor contacts (at large biases, the voltage in the superconducting state significantly exceeds that in the normal state). In addition, we describe an unusual temperature-dependent large-bias dynamic resistance, including a sudden increase as temperature decreases through the superconducting transition, a steady decrease with decreasing temperature below Tc, and a second smaller increase as temperature decreases through the onset temperature for the recently reported proximity-effect-induced pair current [A. Kastalsky et al., Phys. Rev. Lett. 67, 3026 (1991)]. These phenomena are discussed in terms of the rapidly evolving theory of superconductor-normal contacts with finite interface transmittance

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
47
Journal Issue
13
Journal Page Range
p. 8361-8364.
ISSN
0163-1829
CODEN
PRBMDO