Excess voltage and resistance in superconductor-semiconductor junctions
Creators
- 1. IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)
- 2. AT ampersand T Bell Laboratories, Holmdel, New Jersey 07733 (United States)
Description
We report the observation of excess voltage in Nb-InxGa1-xAs superconductor-semiconductor contacts (at large biases, the voltage in the superconducting state significantly exceeds that in the normal state). In addition, we describe an unusual temperature-dependent large-bias dynamic resistance, including a sudden increase as temperature decreases through the superconducting transition, a steady decrease with decreasing temperature below Tc, and a second smaller increase as temperature decreases through the onset temperature for the recently reported proximity-effect-induced pair current [A. Kastalsky et al., Phys. Rev. Lett. 67, 3026 (1991)]. These phenomena are discussed in terms of the rapidly evolving theory of superconductor-normal contacts with finite interface transmittance
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 47
- Journal Issue
- 13
- Journal Page Range
- p. 8361-8364.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24052561
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CONTACTS; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; NIOBIUM; PROXIMITY EFFECT; SEMICONDUCTOR JUNCTIONS; SUPERCONDUCTING JUNCTIONS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K; TRANSITION TEMPERATURE; TUNNEL EFFECT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; METALS; PHYSICAL PROPERTIES; PNICTIDES; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENTS