Silicon microcolumn arrays grown by nanosecond pulsed-excimer laser irradiation
Creators
- 1. Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996-2200 (United States)
- 2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6056 (United States)
Description
Arrays of high aspect ratio silicon microcolumns that protrude well above the initial surface have been formed by cumulative nanosecond pulsed-excimer laser irradiation of silicon. Microcolumn growth is strongly affected by the gas environment, being enhanced in air or other oxygen-containing ambient. It is proposed that microcolumn growth occurs through a combination of pulsed-laser melting of the tips of the columns and deposition of silicon from the intense flux of silicon-rich vapor produced by ablation of the surface regions between columns. The molten tips of the columns are strongly preferred sites for deposition, resulting in a very high axial growth rate. The growth process is conceptually similar to the vapor - liquid - solid method used to grow silicon whiskers. However, in the present case the pulsed-laser radiation fulfills two roles almost simultaneously, viz., providing the flux of silicon-containing molecules and melting the tips of the columns. copyright 1999 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 74
- Journal Issue
- 16
- Journal Page Range
- p. 2322-2324
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30037715
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- GROWTH; LASER RADIATION; MELTING; MORPHOLOGY; PULSES; RADIATION EFFECTS; SILICON
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTS; PHASE TRANSFORMATIONS; RADIATIONS; SEMIMETALS