Published April 1999 | Version v1
Journal article

Silicon microcolumn arrays grown by nanosecond pulsed-excimer laser irradiation

  • 1. Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996-2200 (United States)
  • 2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6056 (United States)

Description

Arrays of high aspect ratio silicon microcolumns that protrude well above the initial surface have been formed by cumulative nanosecond pulsed-excimer laser irradiation of silicon. Microcolumn growth is strongly affected by the gas environment, being enhanced in air or other oxygen-containing ambient. It is proposed that microcolumn growth occurs through a combination of pulsed-laser melting of the tips of the columns and deposition of silicon from the intense flux of silicon-rich vapor produced by ablation of the surface regions between columns. The molten tips of the columns are strongly preferred sites for deposition, resulting in a very high axial growth rate. The growth process is conceptually similar to the vapor - liquid - solid method used to grow silicon whiskers. However, in the present case the pulsed-laser radiation fulfills two roles almost simultaneously, viz., providing the flux of silicon-containing molecules and melting the tips of the columns. copyright 1999 American Institute of Physics

Additional details

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
74
Journal Issue
16
Journal Page Range
p. 2322-2324
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
30037715
Subject category
S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Descriptors DEI
GROWTH; LASER RADIATION; MELTING; MORPHOLOGY; PULSES; RADIATION EFFECTS; SILICON
Descriptors DEC
ELECTROMAGNETIC RADIATION; ELEMENTS; PHASE TRANSFORMATIONS; RADIATIONS; SEMIMETALS