Anisotropic etching of polymer films by high energy (∼100s of eV) oxygen atom neutral beams

An inductively coupled high density plasma source was used to generate an energetic (100s of eV), high flux (equivalent of ∼10s mA/cm2) oxygen atom neutral beam. Positive ions were extracted from the plasma and neutralized by a metal grid with high aspect ratio holes. High rate (up to 0.6 μm/min), microloading-free, high aspect ratio (up to 5:1) etching of polymer with straight sidewalls of sub-0.25 μm features was demonstrated. The polymer etch rate increased with power and showed a shallow maximum with plasma gas pressure. The etch rate increased roughly as the square root of the boundary voltage (which controls neutral beam energy), and was independent of substrate temperature. The latter observation suggests that spontaneous etching did not occur. The degree of neutralization of the extracted ions was estimated to be greater than 99% at the base case conditions used in this work