Published April 1987
| Version v1
Journal article
Negative differential resistivity of high ohmic cadmium selenide films
Description
The formation mechanism of the negative differential resistivity (NDR) region at volt-current characteristics of vacuum-annealed high ohmic CdSe films is investigated. The appearance of the NDR part is connected with a decrease of the free electron concentration as a result of their capture into surface levels formed by chemisorbed oxygen
Additional details
Additional titles
- Original title (Russian)
- Отрицательное дифференциальное сопротивление высокоомных пленок селенида кадмия
Publishing Information
- Journal Title
- Ukr. Fiz. Zh.
- Journal Volume
- 32
- Journal Issue
- 4
- Series
- Ukr. Fiz. Zh.
- Journal Page Range
- 607-609
- ISSN
- 0503-1265
- CODEN
- UFIZA
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 19054444
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM SELENIDES; CHEMISORPTION; ELECTRIC CONDUCTIVITY; ENERGY-LEVEL DENSITY; FILMS; OXYGEN
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; ELECTRICAL PROPERTIES; ELEMENTS; NONMETALS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEPARATION PROCESSES