Published March 15, 2006
| Version v1
Journal article
Growth, real structure and applications of GaSe1-xS x crystals
Creators
- 1. Laboratory of Ecological Instrument Making, Institute of Monitoring of Climatic and Ecological Systems, SB RAS, Tomsk 634055 (Russian Federation)
- 2. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation)
- 3. Semiconductor Materials Science Laboratory, Siberian Physico-Technical Institute, Tomsk 634050 (Russian Federation)
Description
Real defect structure, growing technology and physical properties of doped GaSe:S crystals are presented. From comparative experiment on CO2 laser SHG at identical experimental conditions 1.45 times advantages of GaSe:S (2 wt%) in relation to pure and GaSe:In (0.1 wt%) crystals are developed
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2005.12.012;
- PII
- S0921-5107(05)00784-1;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 128
- Journal Issue
- 1-3
- Journal Page Range
- p. 205-210
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37120857
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARBON DIOXIDE LASERS; CONCENTRATION RATIO; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALS; DOPED MATERIALS; GALLIUM SELENIDES; GALLIUM SULFIDES; PHYSICAL PROPERTIES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; GALLIUM COMPOUNDS; GAS LASERS; LASERS; MATERIALS; SELENIDES; SELENIUM COMPOUNDS; SULFIDES; SULFUR COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.