Electrical doping of Hg Cd Te by ion implantation and heat treatments

The general properties of junctions made by ion implantation in Hg Cd Te semiconductor are recalled structure of junctions made by implantation damage, defects, anneals, junctions made by active impurities. The effect of acceptor evolution in this semiconductor after heat treatments and a study of the kinetics are presented. Very high quality devices with very small size and large two-dimensional arrays are shown to be possibly achieved using ion implantation technique of junction formation in the semiconductor epilayers grown by LPE