GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm

Optimum conditions for the growth of the GaAs1-xSbx/GaAs heterostructures by the method of molecular-bean epitaxy are determined; it is shown that effective long-wavelength photoluminescence at T = 300 K can be obtained at wavelengths as long as λ = 1.3 μm by increasing the antimony incorporation. As the excitation power is increased, the appearance of a short-wavelength line (in addition to a shift of a photoluminescence maximum to shorter wavelengths characteristic of the type II heterojunctions) related to direct optical transitions in the real space takes place; this relation is confirmed by the results of studying the photoluminescence spectra with subpicosecond and nanosecond time resolution in the case of pulsed excitation.