Published April 2009
| Version v1
Journal article
Type-II excitons in ZnTe/ZnSe quantum dots
Creators
- 1. CEA-CNRS group ''Nanophysique et Semiconducteurs'', Institut Neel-CNRS, Grenoble (France)
Description
We present the photoluminescence and time resolved photoluminescence properties of an ensemble of ZnTe quantum dots embedded in a ZnSe matrix. Those heterostructures exhibit a type-II band alignment with holes confined within the dots and electrons kept in the close vicinity of the dots by coulomb attraction. We show that the structural and optical features of the samples, grown by molecular beam epitaxy, are highly sensitive to the growth conditions. Depending on the Se to Zn flux ratio, the ZnTe islands can disappear and lead to a thin 2D quantum well, or be preserved and localize excitons, as evidenced by photoluminescence experiments. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.200880600Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Current Topics in Solid State Physics (Print)
- Journal Volume
- 6
- Journal Issue
- 4
- Journal Page Range
- p. 857-859
- ISSN
- 1862-6351
Conference
- Title
- 5. International conference on semiconductor quantum dots
- Acronym
- QD 2008
- Dates
- 11-16 May 2008
- Place
- Gyeongju (Korea, Republic of)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 40042745
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; BRAGG REFLECTION; DE-EXCITATION; ELECTRON DIFFRACTION; EMISSION SPECTRA; ENERGY SPECTRA; EXCITED STATES; EXCITONS; HETEROJUNCTIONS; LIFETIME; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; QUANTUM WELLS; TEMPERATURE RANGE 0000-0013 K; TRANSMISSION ELECTRON MICROSCOPY; VISIBLE SPECTRA; ZINC SELENIDES; ZINC TELLURIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; EMISSION; ENERGY LEVELS; ENERGY-LEVEL TRANSITIONS; EPITAXY; LUMINESCENCE; MICROSCOPY; NANOSTRUCTURES; PHOTON EMISSION; QUASI PARTICLES; REFLECTION; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; ZINC COMPOUNDS
Optional Information
- Notes
- With 6 figs., 0 tabs., 9 refs.; SICI: 1862-6351(200904)6:4<857::AID-PSSC200880600>3.0.TX;2-L