Published April 2009 | Version v1
Journal article

Type-II excitons in ZnTe/ZnSe quantum dots

  • 1. CEA-CNRS group ''Nanophysique et Semiconducteurs'', Institut Neel-CNRS, Grenoble (France)

Description

We present the photoluminescence and time resolved photoluminescence properties of an ensemble of ZnTe quantum dots embedded in a ZnSe matrix. Those heterostructures exhibit a type-II band alignment with holes confined within the dots and electrons kept in the close vicinity of the dots by coulomb attraction. We show that the structural and optical features of the samples, grown by molecular beam epitaxy, are highly sensitive to the growth conditions. Depending on the Se to Zn flux ratio, the ZnTe islands can disappear and lead to a thin 2D quantum well, or be preserved and localize excitons, as evidenced by photoluminescence experiments. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200880600

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. C, Current Topics in Solid State Physics (Print)
Journal Volume
6
Journal Issue
4
Journal Page Range
p. 857-859
ISSN
1862-6351

Conference

Title
5. International conference on semiconductor quantum dots
Acronym
QD 2008
Dates
11-16 May 2008
Place
Gyeongju (Korea, Republic of)

Optional Information

Notes
With 6 figs., 0 tabs., 9 refs.; SICI: 1862-6351(200904)6:4<857::AID-PSSC200880600>3.0.TX;2-L