Published 1987
| Version v1
Book
X-ray induced damage in boron nitride, silicon, and silicon nitride lithography masks
- 1. Stanford Synchrotron Radiation Lab., SLAC Bin 69, P.O. Box 4349, Stanford, CA (USA)
- 2. Micronix, 100 Albright Way, Los Gatos, CA (USA)
- 3. Intel Corp., SC2-25, 3065 Bowers Ave., Santa Clara, CA (USA)
Description
Boron nitride membranes (produced through chemical vapor deposition of diborane and ammonia) have been exposed to synchrotron radiation and have showed severe degradation in optical properties after absorbing doses on the order of 200kJ/cm3. Damage kinetics are described as well as measurements made to identify the damage mechanism. Preliminary results on associated mechanical damage are also presented. Boron nitride membranes (produced through the pyrolysis of borazine), silicon nitride and silicon membranes exposed and tested in the same manner showed no such degradation
Additional details
Publishing Information
- Publisher
- SPIE Society of Photo-Optical Instrumentation Engineers.
- Imprint Place
- Bellingham, WA (USA)
- Imprint Title
- Electron-beam, X-ray, and ion-beam lithographies VI
- Imprint Pagination
- vp.
- Series
- SPIE - Volume 773.
- Journal Page Range
- p. 126-131.
Conference
- Title
- Electron beam, X-ray, and ion beam lithographies VI.
- Dates
- 5-6 Mar 1987.
- Place
- Santa Clara, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21027161
- Subject category
- S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BORON NITRIDES; CHEMICAL VAPOR DEPOSITION; IRRADIATION; KINETICS; MEMBRANES; OPTICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; SILICON NITRIDES; SYNCHROTRON RADIATION; X RADIATION
- Descriptors DEC
- BORON COMPOUNDS; BREMSSTRAHLUNG; CHEMICAL COATING; DEPOSITION; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; RADIATIONS; SILICON COMPOUNDS; SURFACE COATING
Optional Information
- Secondary number(s)
- CONF-8703284--.