Published 1987 | Version v1
Book

X-ray induced damage in boron nitride, silicon, and silicon nitride lithography masks

  • 1. Stanford Synchrotron Radiation Lab., SLAC Bin 69, P.O. Box 4349, Stanford, CA (USA)
  • 2. Micronix, 100 Albright Way, Los Gatos, CA (USA)
  • 3. Intel Corp., SC2-25, 3065 Bowers Ave., Santa Clara, CA (USA)

Description

Boron nitride membranes (produced through chemical vapor deposition of diborane and ammonia) have been exposed to synchrotron radiation and have showed severe degradation in optical properties after absorbing doses on the order of 200kJ/cm3. Damage kinetics are described as well as measurements made to identify the damage mechanism. Preliminary results on associated mechanical damage are also presented. Boron nitride membranes (produced through the pyrolysis of borazine), silicon nitride and silicon membranes exposed and tested in the same manner showed no such degradation

Additional details

Publishing Information

Publisher
SPIE Society of Photo-Optical Instrumentation Engineers.
Imprint Place
Bellingham, WA (USA)
Imprint Title
Electron-beam, X-ray, and ion-beam lithographies VI
Imprint Pagination
vp.
Series
SPIE - Volume 773.
Journal Page Range
p. 126-131.

Conference

Title
Electron beam, X-ray, and ion beam lithographies VI.
Dates
5-6 Mar 1987.
Place
Santa Clara, CA (USA).

Optional Information

Secondary number(s)
CONF-8703284--.