Published July 1, 1988
| Version v1
Journal article
Radiation damage in PIN-photodiodes
Description
The investigations of radiation damages to Si-PIN-photodiodes are done in view of their applicability as beam loss monitors for the HERA p-ring. The results indicate that photodiodes can withstand doses of 5x103 Gy without any problems, except a small increase of dark currents. Therefore, these diodes could be used as loss monitors in HERA for several years. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. A
- Journal Volume
- 270
- Journal Issue
- 1
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. A.
- Journal Page Range
- 56-61
- ISSN
- 0168-9002
- CODEN
- NIMAE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 19089785
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BACKGROUND NOISE; BEAM MONITORS; HERA STORAGE RING; JUNCTION DIODES; PHOTODIODES; PHYSICAL RADIATION EFFECTS; SILICON DIODES
- Descriptors DEC
- MEASURING INSTRUMENTS; MONITORS; NOISE; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; STORAGE RINGS