Published November 30, 2009 | Version v1
Journal article

Electric-field tuning of the metal-insulator transition in ultrathin films of LaNiO3

  • 1. DPMC, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneve 4 (Switzerland)

Description

Epitaxial ultrathin films of the metallic perovskite LaNiO3 were grown on (001) SrTiO3 substrates using off-axis rf magnetron sputtering. The film structure was characterized and their electrical properties investigated. Films thinner than 8 unit cells display a metal-insulator transition at a thickness dependent characteristic temperature. Hall measurements revealed p-type conduction, which was confirmed by electric field-effect experiments. Large changes in the transport properties and the metal-insulator transition temperature were observed for the thinnest LaNiO3 films as the carrier density was electrostatically tuned.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
95
Journal Issue
22
Journal Page Range
p. 222114-222114.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2009 American Institute of Physics