Published March 15, 2013 | Version v1
Journal article

Electronic topological transition in Nb3Al under compression: An ab initio study

  • 1. Crystal Growth Center, Anna University, Chennai 600 025 (India)

Description

Very recently Yu et al. studied the structural stability of Nb3Al over a range of pressure up to 39.5 GPa. They have noticed an anomaly in the pressure volume plot beyond 19.2 GPa. The physical mechanism is not explained by them. The electronic structure is obtained as function of pressure by the all electron full potential linear augmented plane wave method. The energy dispersion curves are plotted. From the plot we observe that the 'd' like band of Nb at the zone center moves under pressure which may be the possible reason for the isostructural phase transition reported experimentally. The elastic properties are also calculated which also confirms the transition

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2012.12.029

Additional details

Identifiers

DOI
10.1016/j.physb.2012.12.029;
PII
S0921-4526(12)01071-X;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
413
Journal Page Range
p. 1-5
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.