Excitations in doped quantum dot driven by discontinuously and randomly reversing electric field: Influence of impurity

Graphical abstract: We explore the excitation profile of a repulsive impurity doped quantum dot. The dopant impurity potential chosen assumes Gaussian form. The quantum dot is subject to a discontinuously and randomly reversing static electric field. The investigation reveals how impurity strength, impurity location, and impurity domain can influence the excitation rate when the maximum value of randomly varying field reversal time is kept above a threshold value. Time-dependent Hellman-Feynman theorem has been invoked to understand the extent of external field-to-dot energy transfer. Research Highlights: RHtriangle The excitation profile of quantum dot subject to discontinuously and randomly reversing static electric field has been investigated. RHtriangle The quantum dot is doped with a repulsive Gaussian Impurity. RHtriangle The impurity strength, impurity domain, and impurity location delicately modulate the excitation profile when the field reversal time is kept above a threshold value. RHtriangle The findings could have important engineering applications. - Abstract: We explore the excitation profile of a repulsive impurity doped quantum dot. The dopant impurity potential chosen assumes Gaussian form. The quantum dot is subject to a discontinuously and randomly reversing static electric field. The investigation reveals how impurity strength, impurity location, and impurity domain can influence the excitation rate when the maximum value of randomly varying field reversal time is kept above a threshold value. Time-dependent Hellman-Feynman theorem has been invoked to understand the extent of external field-to-dot energy transfer.