Effect of fast-neutron irradiation intensity on the processes of defect formation in silicon

The results of experimental study on the effect of rates of main radiation defect introduction in n-type silicon (A-, E-centers, divacancies) on reactor fast neutron irradiation intensity are presented. Rates of introduction of the observed defects are shown to decrease in a certain range of intensity variation. The rates of defect introduction are constant outside this range (at ''low'' and ''high'' intensities). The results are explained by annihilation of vacancies and interstitials at interaction of incompletely formed disordered ranges with each other. A quantitative model is developed. Comparison of this model with the experiment made it possible to estimate some parameters of defect formation