Published October 1985 | Version v1
Report

Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1

Description

Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months

Availability note (English)

Available from NTIS, PC A07/MF A01.

Additional details

Publishing Information

Imprint Pagination
132 p.
Report number
N--86-20153

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
17067880
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Numerical Data, Non-conventional Literature
Descriptors DEI
DATA COMPILATION; EXPERIMENTAL DATA; FIELD EFFECT TRANSISTORS; PHYSICAL RADIATION EFFECTS; QUALITY CONTROL; RELIABILITY; SEMICONDUCTOR DEVICES; TRANSISTORS
Descriptors DEC
CONTROL; DATA; INFORMATION; NUMERICAL DATA; RADIATION EFFECTS

Optional Information