Published October 1985
| Version v1
Report
Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1
Description
Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months
Availability note (English)
Available from NTIS, PC A07/MF A01.Additional details
Publishing Information
- Imprint Pagination
- 132 p.
- Report number
- N--86-20153
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17067880
- Subject category
- S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Numerical Data, Non-conventional Literature
- Descriptors DEI
- DATA COMPILATION; EXPERIMENTAL DATA; FIELD EFFECT TRANSISTORS; PHYSICAL RADIATION EFFECTS; QUALITY CONTROL; RELIABILITY; SEMICONDUCTOR DEVICES; TRANSISTORS
- Descriptors DEC
- CONTROL; DATA; INFORMATION; NUMERICAL DATA; RADIATION EFFECTS
Optional Information
- Secondary number(s)
- NASA-CR--176557; JPL-PUB--85-43-VOL-1.